Light emitting diode chip with integrated diode for electrostatic discharge protection

Leuchtdiode mit integrierte Diode zum Schutz vor elektrostatischen Entladungen

Diode électroluminescente avec diode integrée de protection contre les décharges electrostatiques


A relatively small ESD protection diode is formed on the same chip as a light emitting diode. In one embodiment, the ESD diode is a mesa-type diode isolated from the light emitting diode by a trench. To reduce the series resistance of the ESD diode, the PN junction and metal contact to the semiconductor material is made long and expands virtually the width of the chip. Various configurations of the PN junction and the N and P metal contacts for the ESD diode are described for increasing the breakdown voltage and for improved testing.




Download Full PDF Version (Non-Commercial Use)

Patent Citations (4)

    Publication numberPublication dateAssigneeTitle
    JP-H10200159-AJuly 31, 1998Rohm Co Ltd, ローム株式会社半導体発光素子
    US-2002179914-A1December 05, 2002Jinn-Kong SheuGroup III-V element-based LED having flip-chip structure and ESD protection capacity
    US-2004012033-A1January 22, 2004Tae-Kyung YooSemiconductor LED device and method for manufacturing the same
    US-3927344-ADecember 16, 1975Philips CorpMonolithic semiconductor device including a protected electroluminescent diode

NO-Patent Citations (0)


Cited By (0)

    Publication numberPublication dateAssigneeTitle