A light emitting device includes a resonant cavity formed by a reflective metal
layer and a distributed Bragg reflector. Light is extracted from the resonant cavity through
the distributed Bragg reflector. A light emitting region sandwiched between a layer of first
conductivity type and a layer of second conductivity type is disposed in the resonant cavity.
In some embodiments, first and second contacts are formed on the same side of the resonant
cavity, forming a flip chip or epitaxy up device.