Method of forming an interlayer insulating film

Verfahren zum Herstellen eines isolierenden Zwischenfilms

Procédé de fabrication d'une couche intermédiaire isolante

Abstract

The invention is directed to a method of forming an interlayer insulating film. The film is formed from an organic silicon compound having the general formula R' x SiH 4-x (where R' is a phenyl or vinyl group and x is an integer of 1-3), which is used to form a silicon oxide film containing an organic component. Such a film may be used in semiconductor devices.

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Patent Citations (2)

    Publication numberPublication dateAssigneeTitle
    DE-4126759-A1February 18, 1993Siemens AgThin, silicon-contg. organic layers prodn. - by irradiation of organo-silane(s)-alkoxy:silane(s) or -siloxane(s) with pulsed laser light of specified wavelength, pulse length, frequency and energy
    JP-H03101123-AApril 25, 1991Agency Of Ind Science & Technol, Mitsui Toatsu Chem Inc, Sharp CorpManufacture of amorphous semiconductor film

NO-Patent Citations (2)

    Title
    DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; PAVELESCU, CRISTIAN ET AL: "Amorphous silicon and polysilicon thin layer coating method for electroni device production", XP002190414, retrieved from STN Database accession no. 120:42590 CA
    PATENT ABSTRACTS OF JAPAN vol. 015, no. 288 (E - 1092) 22 July 1991 (1991-07-22)

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