Méthode de commande d'une mémoire à semiconducteurs

Betriebsverfahren eines Halbleiterspeichers

Method for driving semiconductor memory

Abstract

A multi-valued data is written in a ferroelectric capacitor, which stores a multi-valued data in accordance with displacement of polarization of a ferroelectric film thereof, by applying a relatively high first writing voltage or a relatively low second writing voltage between a first electrode and a second electrode of the ferroelectric capacitor. Next, a potential difference induced between the first and second electrodes is removed. Then, the multi-valued data is read by detecting the displacement of the polarization of the ferroelectric film by applying a reading voltage between the second electrode and a substrate where a reading FET for detecting the displacement of the polarization of the ferroelectric film is formed. The reading voltage has the same polarity as the first writing voltage and is set to such magnitude that, in applying the reading voltage, a first potential difference induced between the gate electrode of the reading FET and the substrate when the multi-valued data is written by applying the first writing voltage is smaller than a second potential difference induced between the gate electrode and the substrate when the multi-valued data is written by applying the second writing voltage.

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Patent Citations (3)

    Publication numberPublication dateAssigneeTitle
    EP-1170753-A1January 09, 2002Matsushita Electric Industrial Co., Ltd.Méthode de commande d'une mémoire à semiconducteurs
    JP-2000022010-AJanuary 21, 2000Toshiba Corp, 株式会社東芝Semiconductor memory
    US-6151242-ANovember 21, 2000Kabushiki Kaisha ToshibaSemiconductor memory device

NO-Patent Citations (1)

    Title
    TAKASHIMA D ET AL: "GAIN CELL BLOCK ARCHITECTURE FOR GIGABIT-SCALE CHAIN FERROELECTRIC RAM", 1999 SYMPOSIUM ON VLSI CIRCUITS. DIGEST OF TECHNICAL PAPERS. KYOTO, JUNE 17 - 19, 1999, SYMPOSIUM ON VLSI CIRCUITS, NEW YORK, NY: IEEE, US, vol. CONF. 13, 17 June 1999 (1999-06-17), pages 103 - 104, XP000894775, ISBN: 0-7803-5441-9

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