Edge termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same

用于碳化硅器件的边缘终端结构和制造包含该结构的碳化硅器件的方法

Abstract

An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings (34) in a silicon carbide layer that at least partially surround a silicon carbide-based junction, an insulating layer on the floating guard rings, and a silicon carbide surface charge compensation region (38) between the floating guard rings and adjacent the surface of the silicon carbide layer. A silicon nitride layer (56) is on the silicon carbide layer, and an organic protective layer (66) is on the silicon nitride layer. An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer. Methods of forming edge termination structures are also disclosed.
一种用于碳化硅半导体器件的边缘终端结构,包括:位于碳化硅层中的多个间隔的同心浮置保护环(34),该浮置保护环至少部分围绕基于碳化硅的结;该浮置保护环上的绝缘层;以及位于该浮置保护环之间并且与该绝缘层相邻的碳化硅表面电荷补偿区(38)。在该碳化硅层上有氮化硅层(56),并且在该氮化硅层上有一有机保护层(66)。在该氮化硅层和碳化硅层表面之间可以有氧化物。同时还公开了形成边缘终端结构的方法。

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    CN-103824760-AMay 28, 2014株洲南车时代电气股份有限公司一种碳化硅功率器件结终端的制造方法